Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout
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چکیده
منابع مشابه
Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout
In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the...
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Article history: Received 27 May 2014 Received in revised form 4 August 2014 Accepted 25 August 2014 Available online 27 September 2014
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ژورنال
عنوان ژورنال: International Scholarly Research Notices
سال: 2014
ISSN: 2356-7872
DOI: 10.1155/2014/145759